高功率密度X波段大功率固态发射组件研究

    Research on High-Power-Density Solid-State X-Band Power Amplifier Modules

    • 摘要: 随着雷达发射技术的发展,发射组件小型化、高功率密度化成为研究趋势。基于此,为了提升X波段固态发射组件的功率密度,采用两级氮化镓功放模块,通过紧凑型布局实现大功率输出;8路功分合成器采用双面端子,分上下两层进行加工,在不影响性能的情况下相比于常规功分合成器尺寸缩减一半,同时采用铝合金材料、切铣加工,将长径比降为5;在电源供电部分,采用高频率的半桥LLC实现DC390V转DC28V的2400W功率输出,将尺寸压缩到全砖的2/3,+5V、-5V及3.3V辅助电源部分采用模块化设计,将EMI滤波电路、功率电路、控制电路、保护电路及滤波电路进行集成封装,在满足性能需求的情况下,将电路尺寸压缩到原先尺寸的一半;采用汉堡式结构,将调制电路、电源电路与功放部分分别布局在组件冷板两面,整体降低固态发射组件的尺寸,进一步提升组件的功率密度。实测结果表明,组件峰值功率达到1548W,平坦度≤±0.36dB,输出杂散≤-71.55dBc,功率密度相比于同波段组件提升了21.32%,达到4690.91W/ft3,具有明显的优势。

       

      Abstract: With the advancement of radar transmission technology, the miniaturization and high power density of transmission components have become research hotspots and challenges. Based on this, to enhance the power density of X-band solid-state transmission components, a two-stage gallium nitride power amplifier module was employed, achieving high-power output through compact layout; the 8-way power divider/combiner utilized dual-sided terminals and was processed in two layers, reducing the size by half compared to conventional counterparts without compromising performance. Additionally, aluminum alloy materials and machining were employed to lower the aspect ratio to 5. In the power supply section, a high-frequency half-bridge LLC was used to achieve 2400W DC28V output from DC390V, compressing the size to two-thirds of a full brick. The auxiliary power supplies for +5V, -5V, and 3.3V were designed modularly, integrating EMI filtering circuits, power circuits, control circuits, protection circuits, and filtering circuits into a single package, reducing circuit size by half while meeting performance requirements. A sandwiched structure was adopted, with modulation circuits, power circuits, and amplifier sections arranged on both sides of the component cold plate, further reducing the size of the solid-state transmission component and increasing its power density. Measured results show the component achieved a peak power of 1548W, flatness ≤±0.36dB, output spurious ≤-71.55dBc, and a power density 21.32% higher than components in the same band, reaching 4690.91W/ft³, demonstrating significant advantages.
       

       

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