Abstract: The requirement of power supply with high power density and high efficiency becomes more urgent for modern radar. The power devices based on the third generation semiconductor material of silicon carbide (SiC) have promising advantages on breakdown voltage, high switching frequency operation, and thermal performance. The characteristics and status of SiC devices are introduced in detail, and the application direction of SiC devices in power supply for radar system is analyzed. The experimental power supply prototype is designed based on SiC metal oxide semiconductor field effect transistor (MOSFET) and the experiments for high switching frequencies capability are conducted. The results illustrate that SiC MOSFET operating at high switching frequencies could significantly reduce system losses, and upgrade power density.