Design and Implementation of S-band Miniaturization High Power Amplifier Module

The miniaturization and high power of transmitter channel power amplifiers requirements for modern S-band phased array radars are increasing. GaN power devices have high power density, high efficiency and outstanding thermal properties. The power amplifier module constructed with GaN power devices is the preferred solution to realize miniaturization and high power. In this paper,a miniaturized high power amplifier module of S band is developed by using flat-type internal matching GaN power amplifier,GaN MMIC chip, Lange bridge and micro-assembly process. The module is small and light, and the test results show that the module output power is greater than 150 W,the power gain is greater than 35 dB and the efficiency is greater than 50% in 10% bandwidth.Compared with the power amplifier module based on discrete package power transistors, it has huge advantages in weightand volume, and can be widely used in modern lightweight phased array radar.